| PART |
Description |
Maker |
| HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120B |
From old datasheet system
35A 1200V NPT Series N-Channel IGBT
35A/ 1200V/ NPT Series N-Channel IGBT
36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247
35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, N-CHANNEL IGBT
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| CM75TF-24H |
Six-IGBT IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| GP1600FSS12 |
Powerline N-Channel Single Switch IGBT Module Advance Information 2100 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| BSM100GB120DN2K BSM50GB120DN2 BSM50GAL120DN2 |
100 A, 1200 V, N-CHANNEL IGBT
50 A, 1200 V, N-CHANNEL IGBT
|
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
| DIM200WBS12-A000 |
Single Switch IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| SEMIX352GB128DS08 |
SPT IGBT Modules 370 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX303GB12E4S |
Trench IGBT Modules
466 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
|
